Interface Structure and Device Properties of SrTiO3 on Si (001)
Kristopher E. Andersen, Center for Computational Materials Science, Naval Research Laboratory, Washington, DC will present Interface Structure and Device Properties of SrTiO3 on Si (001)
| What | Presentation |
|---|---|
| When |
2006-08-29 03:10 PM
2006-08-29 04:00 PM
August 29, 2006 from 03:10 pm to 04:00 pm |
| Where | PHYS/GEO 416 |
| Contact Name | Kristopher E. Andersen |
| Contact Email | andersen@dave.nrl.navy.mil |
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Kristopher E. Andersen from the Center for Computational Materials Science at the Naval Research Laboratory in Washington, DC will give a presentation titled Interface Structure and Device Properties of SrTiO3 on Si (001). All are invited to attend.
The need to replace SiO2 as the gate dielectric in Si based microelectronic devices has led to the investigation of many alternative oxides, of which one of the most promising is SrTiO3 (STO). Since the lattice mismatch between STO and the Si (001) surface is small, it is possible to grow STO on Si using a nontrivial molecular beam epitaxy process pioneered by McKee et al. However, (i) achieving well-ordered growth is difficult, (ii) the interface structure is poorly understood, and (iii) the conduction band offset of the heterostructure has been found to be too small (< 0.2 eV) for device applications. Using first-principles density functional theory calculations of the energetics of numerous proposed interfaces, we find the favored structure is one that has not been previously considered and is consistent with several experimental probes. Furthermore, the electric polarization of the STO thin film plays an important role, and suggests that doping the interface with Na, K, Al, or Sc may improve the device properties of the heterostructure.